On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Abstract

The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shifts, curvature masses and density-of-state masses – show new results, rising the issues of the limit of simple models like the effective mass approximation and the 6-level k.p model.