Abstract
The holes confined states in [001] -oriented 5 nm-thick relaxed silicon layer embedded in oxide are investigated using full-band k.p method within the envelop function approximation. Full-band calculations of important transport parameters - energy band shifts, curvature masses and density-of-state masses - show new results, rising the issues of the limit of simple models like the Effective Mass Approximation (EMA) and the 6-level k.p model.
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