Abstract
The method of zone melting with a temperature gradient is used for growing SiC epitaxial layers in the Si-Sc-C system. It is shown that the growth rate is limited by diffusion mass transport provided that the zone width is large enough. Under these conditions the method permits the determination of the kinetic characteristics of the process. The resistivity and the thermal conductivity of the liquid alloy which has been used as a melt zone, consisting of 60% Si and 40% Sc at 1750°C, are calculated. The diffusion coefficient for the transported substance through the liquid zone is determined.
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