Approach to reduce the residual strain in bulk InGaAs crystals grown by the multi‐component zone melting method

Abstract

AbstractAn analytical study has been carried out to evaluate the quantitative amount of strain and its distribution in bulk Inx Ga1–x As crystals grown by the two‐step multi‐component zone melting (MCZM) method. With the combination of Raman scattering, photoluminescence and energy dispersive X‐ray experiments, it has been confirmed that there exists large amount of strain in bulk Inx Ga1–x As crystals grown by the two‐step MCZM method due to approximately exponential variation of composition from 0.06 to 0.29 in the first step growth process. Using an axially symmetrical strain model, the quantitative amount of strain and its distribution have been studied for various compositional profiles including the currently used profile. It has been found that the strain and its distribution are strongly dependent on the shape of the compositional profile. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)