Abstract
The theory of hopping conduction (HC) by radiative tunnel transitions (RTTs) in doped semiconductors in a strong electric field is applied to crystalline β rhombohedral boron. This type of HC occurs by successive downward spontaneous RTTs of current carriers between the localized states near the quasi-Fermi level. At each hop the excess energy is emitted as a long-wavelength photon. The theoretical model used in the present work employs the δ well potential approximation for the wavefunctions of the quasi-localized carriers. The numerical calculations show that the relative contribution of the HC by RTTs to the total strong electric field conductivity of β boron could be significant.
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