Abstract
Abstract The theory of the hopping conduction by the radiative tunnel transitions (RTT) in a strong electric field is applied to amorphous silicon and germanium. On the basis of numerical estimations we suggest that the relative contribution of the RTT mechanism into the total strong electric field hopping conductivity of an amorphous semiconductor could be significant.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.