Abstract
An analysis of the concept of input gate voltage spectral density in MOS devices is presented. It is shown that, within a carrier fluctuation model, the input gate voltage spectral density can be regarded as a flat band voltage spectral density S Vfb. It is demonstrated that the relationship between the drain current and flat band voltage spectral densities, S Id = g m 2S Vfb , is applicable from the linear to the saturation regime of MOSFET operation.
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