Analytical low-frequency 1/ f noise model for lightly-doped-drain MOSFETs operating in the linear region

Abstract

In this paper, we present an analytical low-frequency 1/ f noise applicable to lightly-doped-drain (LDD) and conventional MOSFETs operating in the linear region at strong inversion. The field dependent mobility is accounted for in the model. It is assumed that the 1/ f noise is caused by carrier density fluctuations. In the model, the drain current and the drain current (voltage) spectral density can be calculated directly using external voltages without computer iteration. The noise power increases with increasing drain voltage or decreases with decreasing gate voltage. The model is consistent with published experimental data. It is especially useful for IC engineering and circuit simulation.