Abstract
This reports on an extensive study of the characteristics of AuGe and AuGeSi liquid metal alloy ion sources as a model system for new semiconductor compatible FIB sources. Such characteristics include ion beam mass spectra. A careful investigation has been undertaken where the emitter temperature is the main variable parameter. This work concerns the temperature dependence of the mass spectra of two needle-type liquid metal alloy ion sources (LMAISs), namely Au77Ge14Si9 (Tm = 364°C) and Au73Ge27 (Tm = 365°C). The sources are important for producing SiGe implanted layers. The experimental results, in conjunction with existing theories, strongly points towards the co-existence of two mechanisms for the emission of doubly-charged monomer ions: direct filed-evaporation and post-ionisation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
