Abstract
Features of microdefect (MD) formation in GaAs(Si) single crystals grown by horizontally oriented crystallization were studied by X-ray diffuse scattering (XRDS). Measurements were performed at room temperature (∼298 K) and near the liquid nitrogen evaporation temperature (∼85 K) using an open-flow cooling nitrogen cryostat. A practical technique for measuring XRDS using a triple-axis X-ray diffractometer was developed and applied to separate scattering on defects and thermal diffuse scattering. For a crystal with n = 2.0 × 1018 cm−3, the radius of detected nonspherical MDs was determined as ∼0.2 μm; thermal diffuse scattering (TDS) was experimentally separated. For a crystal with n = 3.9 × 1018 cm−3, nonspherical MDs ∼0.5 μm in radius were detected; TDS was found to be a negligible fraction of total XRDS. At the same time, in the case of coinciding crystal orientations and identical experimental conditions, TDS measurement data for one crystal can be used for other GaAs(Si) crystals with the same orientation.
Published Version
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