Abstract
It was demonstrated that Ge has the same effect as Si on the strain evolution in n-type GaN as measured by x-ray diffraction. Dislocation inclination, which causes tensile strain in n-type GaN, was clearly observed by transmission electron microscopy where Ge doping was introduced during epitaxial growth. This result is explained by the Fermi level effect model that indicates dislocation inclination due to the climbing process through Ga vacancies. Therefore, there is no dependence of dislocation inclination on dopant species.
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