Abstract
Vacancy defects in as-grown silicon were observed by positron annihilation. We found a low density of vacancies in float-zone (FZ) silicon, either undoped or lightly nitrogen doped. In contrast, vacancies were less numerous in differ- ent Czochralski-grown samples. To obtain a quantitative cal- ibration, electron irradiation with low doses was performed. A vacancy concentration of 1- 4 10 14 cm 3 in FZ-Si was obtained.
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