On the role of the static Debye-Waller factor in X-ray rocking curve analysis

Abstract

The best fits of double-crystal X-ray rocking curves from silicon implanted with 11B+, H+, and 28Si+ ions are reported together with the resulting depth profiles of lattice strain and static atomic disorder. While the meaning of the strain profile is widely well established as the effect of lattice expansion or contraction due to the displacement fields of point defect clusters and/or extended defects, the profiles of the atomic disorder so far did not receive sufficient attention. It is demonstrated that also from this quantity useful information can be obtained on the structural modifications occurring in crystals subjected to ion implantation, e.g. surface damage induced by interaction of highly energetic ions with the electronic subsystem of the target, damage associated with the presence of complexes involving the implanted species, and formation of buried amorphous layers.