Abstract
The microstructure of β-FeSi2 silicide layers formed with the addition of Ge by pulsed laser deposition at 650 °C on (001) Si substrate has been investigated by transmission electron microscopy and Mössbauer spectroscopy. The Ge atoms are not incorporated in the silicide in noticeable amounts but the addition causes the growth of β-FeSi2 micrograins with a high density of specific twin lamellae, whereas Ge segregates in epitaxial SiGe alloy grains.
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