Abstract
The problem of two-dimensional diffusion of excitons generated by a pulsating sharply focused low-energy electron beam in a single-crystal gallium nitride was considered by mathematical modeling methods. For the describing the energy loss by electrons in a semiconductor target, a mathematical model is used, based on a separate description of the energy loss by electrons that have experienced small-angle scattering and are absorbed by the target and electrons that have been reflected at large angles and left the target. The main attention is paid to the solution of the differential equations of heat and mass transfer and to the problems of their correctness and stability.
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