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Abstract
Algorithms for using the Galerkin projection method and the projection least squares method to analyze the three-dimensional model of the diffusion of minority charge carriers generated by an electron probe in a semiconductor material are presented. The results obtained using these methods are compared with the analytical solution. An estimate of the error is given, and the condition for the computation stability of the projection least squares method in the form of the limiting relation is obtained.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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