Abstract
Indium gas-phase nucleation is suggested as a possible mechanism responsible for low indium incorporation during InGaN MOVPE. Indium generated due to trimethylindium (TMIn) decomposition provides significant supersaturation in the gas phase. This results in nucleation and subsequent formation of In clusters carried away from the reactor by the gas stream and not participating in InGaN growth. 2D model of gas flow, heat transfer and mass transport accounting for gas-phase pyrolysis of group III precursors and indium nucleation is applied to evaluate this effect on indium incorporation into InGaN during MOVPE in a horizontal tube reactor. It is shown that the nonlinear dependence of indium composition in the epitaxial layer on In/(In + Ga) input ratio is caused by the interplay between precursor pyrolysis and nucleation.
Published Version
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