The Effects of Atomic Hydrogen on Indium Incorporation and Ordering in InGaN Grown by RF-MBE

Abstract

In this work, we have investigated the effects of atomic hydrogen (H) irradiation on the indium (In) incorporation and ordering in InGaN films grown by rf-molecular beam epitaxy (RF-MBE). The hydrogen molecule (H2) and atomic H irradiation in InGaN growth by RF-MBE were found to enhance the In incorporation. The atomic H irradiation in InGaN growth enhanced the In incorporation with increasing flow rate. On the other hand, In incorporation under H2 irradiation did not depend on the H2 flow rate. The In incorporation for samples grown with H was higher than without H2 in the temperature ranges of 640 to 700 °C. We confirmed that atomic H irradiation in InGaN growth was effective at least up to 700 °C. Atomic H is thought to enhance the In incorporation by increasing the nitrogen species, and the degree of ordering due to direct influence of atomic H on the growth kinetics. These results suggested that modulation of atomic H irradiation flux could control the InN percent in InGaN layers.