On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Abstract

AbstractA novel method for the reduction of subthreshold slope below the room‐temperature Boltzmann limit of 60 mV/dec for a field‐effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This internal voltage gain mechanism provides an opportunity for steep subthreshold slope switching below 60 mV/decade of the transistor current. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)