Abstract
There are few reports on the degradation phenomenon and mechanism of AlGaN/GaN heterojunction field-effect transistors (HFETs) operating at cryogenic temperature. In this paper, the off-state capacitance of AlGaN / GaN HFETs at cryogenic temperature and the room temperature was investigated. The negative differential capacitance at 77 Κ and 300 Κ is 11.26 F and 0.69 F, respectively. The capacitance was tested at different temperatures, which showed that the negative differential capacitance came from low-temperature conditions. At room temperature, the resistance was increased sharply under the gate of the device off-state. At this time, the current leakage channel was turned on, the phenomenon of negative differential capacitance was caused by an accumulation of electrons. Through the C-V test at different frequencies at 77 K, it reflects the relationship between the trap level, the off-state leakage current, and the negative differential capacitance. This article provides suggestions for the application of GaN-based radio frequency devices in cryogenic temperature environments.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
