Abstract
The negative differential capacitance (NDC) of p-i-n InGaAs/InP photodetector has been clearly observed, and the small signal model of frequency-dependent NDC is established, based on the accumulation and emission of electrons at the p-InP/i-InGaAs interface. The NDC phenomenon is contributed by the additional capacitance (CT), which is caused by the charging-discharging process in the p-InP/i-InGaAs interface. It is found that the NDC becomes more obvious with decreasing frequency, which is consistent with the conclusion of the experiment. It is proved that the probability of electron capture/escape in the p-i interface is affected by frequency. Therefore, the smaller frequency applied, the higher additional capacitance is obtained.
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