Abstract

Abstract Theory-based, three new unknown photoelectric effects can be occurred in semiconductors under inhomogeneous optical illumination with specific profile shapes along electric field in semiconductor: self-amplification, self-quenching and sign self-inversion of photogeneration rate of mobile charge carriers. The general shapes of corresponding illumination profiles are calculated. The occurring effects cause by local photoexcited space charge (PSC). It is shown that profile shapes depend on parameters of semiconductor, dark electric field strength and temperature. Also, we determine general shapes of “neutral” profiles when local PSC although exists but does not affect the result of interaction of optical radiation with a semiconductor. In other words, calculations with such “neutral” profiles lead to the same result as with using quasi-neutrality approximation, which does not account PSC. The shape of “neutral” profile depends only on dark electric field strength, temperature and sample size along the electric field. Embodiments for all types of profiles are given. The results can be used in practice, first, to increasing significantly photoelectric response of semiconductor detectors of optical radiation.

Highlights

  • Inversion of photogeneration rate of mobile charge inhomogeneous optical illumination with specific carriers profile shapes along electric field in semiconductor: 3. Introduction self-amplification, self-quenching and sign self

  • The goal is to find out possible parameters of semiconductor, dark electric field effects of spatial inhomogeneity of the incident strength and temperature

  • In other shapes can be created in classic configuration when words, calculations with such “neutral” profiles lead optical radiation flux falls perpendicular to electric to the same result as with using quasi-neutrality field direction in semiconductor sample

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Summary

Photosensitivity Spatial Profiling Flux of Radiation

Ε - dielectric permittivity; Δρ - local nonequilibrium space charge; ΔE = E − E0 - change in electric field due to deflection of concentrations of electrons, holes and traps from equilibrium values; q. The first terms in expressions (14) and (15) mean the recombination rates of nonequilibrium electrons and holes (τn and τpare proper lifetimes) under conditions of local quasi-neutrality relative to electric field ΔE, i.e., for sufficiently small values |divΔE|. We keep this terminology for τn and τp in case of violation of quasi-neutrality, so that the values of τn and τp do not depend on value divΔE.

Dp ξn
Bef ζ
Conclusion
The corresponding

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