Abstract
Theoretically predicted that under specific nonuniform profiles of carrier photogeneration density along electric field in semiconductors three unexpected effects can occur. Those are self-amplification and self-quenching of charge carriers photogeneration rate density and selfinversion of its sign. The effects are due to the local photoinduced space charge. The shapes of profiles depend on semiconductor parameters, electric field strength in semiconductor and temperature. Examples of specific profiles for all three types of effects are given.
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