Abstract
Significant reduction by 40 times was achieved in the leakage current of TiO2 passivated porous silicon (PS) Schottky-barrier diode, compared to that of as-grown PS one. It was found that the imperfect native oxide, nonstoichiometric Si-suboxide (SiOx) and Si-O bond with nonbridging oxygen, and highly chemically reactive Si–H2 species are the issues of leakage current. These issues can be drastically suppressed and replaced by a stable stoichiometric SiO2 and Si–OH bond on the TiO2 passivated PS surface. The enriched OH formation will favor the growth of TiO2 and passivate the surface states of PS, hence reducing the leakage current.
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