Abstract
We present the results of structural, analytical, optical and electrophysical investigations of TiB x –GaAs contacts. They were obtained by magnetron sputtering from pressed powder targets and were studied before and after rapid (60 s) thermal annealing (RTA) in a hydrogen atmosphere at T=400°C, 600°C and 800°C. It was shown that a transition layer is formed by Ga x B 1− x As phase during contact formation. The decay of this phase during thermal annealing causes a parameter degradation in the surface-barrier diodes.
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