Abstract
The effect is presented of rapid thermal annealing (RTA) in vacuum and thermal annealing in water vapor at 850 °C on the properties of phosphosilicate glass (PSG) films deposited in PECVD and μPCVD reactors. The films were characterized by etch rates and XPS and AES analyses. The RTA was carried out at 800 - 1400 °C at annealing times varying from 15 to 180 sec. The RTA caused a significant decrease in the etch rate, which is indicative of structural changes. The XPS and AES analyses showed that the PECVD PSG films contain excess Si due to the lower oxidation activity of N2O. The excess Si can be oxidized in water vapor at high temperatures. The excess Si leads to a decrease in the etching rate of the PECVD PSG layers as compared to that of the μPCVD films.
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