On the nature of the edge growth in liquid phase epitaxy of GaAs

Abstract

The origin of the spiky growth often observed near the edge of liquid phase epitaxial layers ( edge growth) is discussed. By special design of the melt chamber we were able to reveal through experiments the fundamental role of wetting of the wall by the solution, in the edge growth process. In the light of our results, the dynamically-induced thermal gradients, appearing in the solution as the system is cooled, have a minor influence on the edge growth phenomenon.