Abstract
Experimental investigations of liquid phase epitaxial growth of GaAs and AlGaAs are presented in this work. The dependence of the epitaxial layer thickness ( d) on the following parameters of the growth process are investigated: (1) the duration ( t) of the growth, (2) the cooling rate ( V T ), (3) the Al content in the liquid phase ( X L Al ), and (4) the growth temperature ( T 0). These results allow us to determine the influence of the different growth parameters on the layer thickness and those growth conditions, at which it is possible to grow very thin epitaxial layers, needed for different semiconductor devices.
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