Abstract
ABSTRACTThe Invariant Line Criteria (ILC) has been used to explain experimentally observed precipitation and epitaxial orientation relationships in a number of metallurgical systems. We propose that ILC may explain the crystallography of misoriented silicide grains in epitaxially grown silicide films. We test our hypothesis on the case of misoriented grains in CoSi2 on Si (001). Our analysis shows that the experimentally observed orientation relationship is predicted by the ILC.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
