Abstract
ABSTRACTThe Invariant Line Criteria (ILC) has been used to explain experimentally observed precipitation and epitaxial orientation relationships in a number of metallurgical systems. We propose that ILC may explain the crystallography of misoriented silicide grains in epitaxially grown silicide films. We test our hypothesis on the case of misoriented grains in CoSi2 on Si (001). Our analysis shows that the experimentally observed orientation relationship is predicted by the ILC.
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