Abstract
The microstructure of nonpolar GaN layers grown on r-plane sapphire substrates was investigated using transmission electron microscopy (TEM). The structure of the GaN layers was predominantly a-plane oriented single-crystal. In the a-plane oriented layers, misoriented grains about 200nm in size with a preferential orientation were detected by selecting a proper observation direction. The preferential orientation relationship between the a-plane oriented layers and the misoriented grains was analyzed using atomic structure models, and two possible formation mechanisms of the misoriented grains were suggested.
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