Abstract
The growth ofγ-alumina on crystallographically distinct aluminium substrates has been studied using transmission electron microscopy and diffraction and Rutherford backscattering. Oxides grown thermally on single-crystal substrates showed a preferred epitactic orientation relationship with the substrate, while oxides grown by the same technique on polycrystalline substrates did not exhibit a preferred orientation relationship. The grain size of the oxide was found to be at least one order of magnitude smaller than the initial grain size of the polycrystalline aluminium substrate.
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