Abstract
The results of a defectoscopic study of large-scale impurity accumulations in InP and GaAs single crystals are expounded. This has been carried out by means of the low-angle mid-IR-light-scattering technique ( lambda 0=10.6 mu m). Estimates of the main parameters of the accumulations (size and bulk free carrier concentration) and the activation energies of the point centres constituting them are given. A model of the inner structure of the accumulations is presented, according to which they are spherical regions enriched with In or Ga microinclusions and InP or GaAs antisites in InP and GaAs respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
