Growth and characterization of III–V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials

Abstract

By using the vapor-pressure-controlled Czochralski (VCZ) method, we successfully grew both InP and GaAs single crystals which had very low dislocation densities one order of magnitude less than those of liquid-encapsulated Czochralski (LEC) single crystals. The residual strain of the VCZ GaAs substrate was one-quarter of that of the LEC substrate, and the generation of slip dislocations on the substrates during molecular beam epitaxy growth was significantly improved on the VCZ substrates. In the sulfur-doped VCZ InP crystal with no slip dislocation, the VPE InGaAs layer grown on the substrate exhibited few propagating dislocations and a very low leak current.