Abstract
The optical excitation of non-equilibrium charge carriers in semiconductors results in a carrier distribution which gives rise to a diffusion process into the bulk of the semiconductor. The diffusion time depends on the absorption coefficient and on the ambipolar diffusion constant. These diffusion times are on a subnanosecond time scale for our experimental conditions. By time-resolved reflectivity measurements we have studied the dependence of the ambipolar diffusion constant on the density of excited carriers. Experimental results were compared with theoretical ones.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.