Abstract
A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, followed by observation of photons at longer wavelength generated from radiative recombination; both band to band and defect to band emissions were used. Use of Micro Photoluminescence Imaging allows rapid characterization and corrective actions for dislocations and other defects which suppress PNP beta.
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