On the high growth rates in electroepitaxial growth of bulk semiconductor crystals in magnetic field

Abstract

Liquid phase electroepitaxial (LPEE) growth experiments conducted under a static magnetic field (aligned perfectly with the vertical symmetry axis of the growth system) show that the growth rate is proportional to the applied magnetic field intensity, and increases with the field intensity level, but does not depend on the field direction. The relationship between growth rate and magnetic field intensity is almost linear. The increase in growth rate is significant, for instance, about more than ten times under a 4.5 kG field level at 3 A/cm 2 electric current density. A model that introduces a new mobility coefficient (electromagnetic mobility) is proposed to predict such high growth rates. The model also predicts growth interface shapes closely.