Abstract
Growth of single crystals under magnetic field is of interest for suppressing the adverse effect of natural convection and also obtaining better mixing in the liquid solution, which are the favourable conditions for a prolonged growth of high quality crystals. In this study, a mathematical model is introduced for solution growth under electric and magnetic fields. Basic and constitutive equations are obtained for a binary electromagnetic continuum mixture, and then specialized for two important solution growth techniques; liquid phase electroepitaxy (LPEE) and travelling heater method (THM). The significance of some linear and nonlinear constitutive coefficients for crystal growth is discussed. As an application, the LPEE growth of GaAs bulk crystals under a static magnetic field is considered. Experimental results, which show that the growth rate under an applied static magnetic field is also proportional to the applied magnetic field and increases with the field intensity level, are predicted using the present model. The significance of a third-order material constant in LPEE is discussed.
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