Abstract
AbstractThe effective electron mass at the Fermi level in quantum wires of non‐parabolic semiconductors in the presence of a parallel magnetic field is studied on the basis of a newly derived 1D‐electron dispersion law. It is found, taking n‐Hg1−xCdxTe and In1−xGaxAsyP1‐y lattice matched to InP as examples, that the effective Fermi level mass depends on the size quantum numbers in addition to the Fermi energy due to the presence of a magnetic field. The effective masses corresponding to different subbands increase with increasing electron concentration and decreasing film thickness in various ways. In addition, the corresponding well‐known results of quantum wires of wide gap materials in absence of a magnetic field are also obtained as special cases of a generalized formulation under certain limiting conditions.
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