Abstract
The degradation of n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ diodes, which are fabricated on strained Si/sub 1-x/Ge/sub x/ epitaxial layers grown on conventional p-type Si substrates, is investigated through the study of the annealing behaviour of forward and reverse diode current and the electrically active defects induced in the Si/sub 1-x/Ge/sub x/ epitaxial layers. The diodes are irradiated at room temperature with 1-MeV electrons with fluences ranging from 10/sup 14/ to 10/sup 15/ e/cm/sup 2/ in a high voltage transmission electron microscope. The germanium fraction of the Si/sub 1-x/Ge/sub x/ epitaxial layer used for the diodes in this study is x=0.12 and 0.16. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence and germanium content. The degradation of the x=0.12 diodes is more remarkable than that of the x=0.16 diodes. In order to examine the recovery process, isochronal thermal anneals are performed in the temperature range between 100 and 350/spl deg/C. From the annealing behaviour, it is pointed out that the electron capture levels, which are related with interstitial boron, are mainly responsible for the increase of reverse and forward current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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