Abstract
The degradation and recovery of irradiated n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ epitaxial diodes and n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) are studied as a function of fluence and germanium content. The degradation of electrical performance of the devices increases with increasing fluence, while it decreases with increasing germanium content. In the Si/sub 1-x/Ge/sub x/ epitaxial layer of devices, an electron capture level which is associated with interstitial boron, is induced. The impact of radiation source on the degradation of performance is correlated with simulations of numbers of knock-on atoms and the nonionizing energy loss. From the experiment of isochronal thermal annealing, it is concluded that the electron capture levels are mainly responsible for the degradation of electrical performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
