Abstract
Thermal oxides on p-type silicon carbide exhibit high densities of interface states and fixed charge. Understanding the effect of the oxide composition on the electrical properties is imperative to improve the quality of oxides on p-type silicon carbide. In this work, we use angle resolved x-ray photoelectron spectroscopy to profile the oxide composition. The result is a direct correlation between the carbon content in the oxide and the density of interface states and fixed charge as determined by electrical capacitance–voltage measurements.
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