Abstract
Abstract Stress-induced leakage current (SILC) has been recognized as a topic of concern in flash memory reliability. It is a reliable failure mechanism, occurring long before oxide breakdown and, hence, limiting oxide lifetime [1] . The physical origin and mechanisms of SILC have not yet been clearly understood and several points open to discussion remain. In this work the role of oxide hole fluence in producing the SILC is discussed. An universal power law of SILC generation kinetics is proposed versus the hole fluence throughout the oxide. The experimental results are theoretically validated by modeling the measured quantum-yield by the contributions of both anode hole injection and electron valence band injection mechanisms.
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