Abstract
The specific features of the deformation behavior of low-resistivity p-type silicon single crystals have been studied using nontraditional methods of plastic deformation. Under the conditions of the combined action of a weak magnetic field and a direct electric current, a significant decrease in the plasticity of silicon is found during its active deformation when compared to the deformation in the absence of a magnetic field. An increase in the electrical conductivity of silicon samples subjected to active plastic deformation is found. The data that are obtained are compared with the previous data on single-crystal germanium. A possible explanation for the observed effects is given.
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