Abstract
We report the results of finite element simulations of the ON state characteristic of VO2-based threshold switching devices and compare the results with experimental data. The model is based on thermally induced threshold switching (thermal runaway) and successfully reproduces the I–V characteristics showing the formation and growth of the conductive filament in the ON state. Furthermore, we compare the I–V characteristics for two VO2 films with different electrical conductivities in the insulating and metallic phases as well as those based on TaOx and NbOx functional layers.
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