Abstract
To improve the turn-off speed and uniformity of atomic threshold switching (TS) devices, we propose the use of the AgSe electrode and controlled bipolar pulse forming method. Compared with TS devices with Ag and AgTe electrodes, TS device with the AgSe electrode shows an extremely fast turn-off speed, which can be explained by the limited injection of Ag into the switching layer. By applying positive bias (Icc = 500 nA, 1 ms) followed by negative bias (−0.1 to −0.2 V, $10~\mu \text{s}$ ), the TS device exhibits excellent switching uniformity. It can be explained by the formation of atomic-scale filament under the positive bias at low Icc and drift-back of excessive Ag by the negative bias. By designing the shape of the filament and concentration of the residual Ag, the TS device with the AgSe electrode shows promise for selector applications.
Highlights
Device with the AgSe electrode shows an extremely fast turn-off speed, which can be explained by the limited injection of Ag into the switching layer
Such devices suffer from a slow turn-off speed and poor uniformity [7,8], and these issues occur with uncontrolled movements and amount of Ag, which forms conductive filament (CF)
We investigated the effects of Ag-based chalcogenide electrodes and bipolar pulse forming on threshold switching (TS)
Summary
Esistive random access memory is one of the promising candidates for high-density memory applications due to its simple structure and three-dimensional stackable properties, which are suitable for cross-point arrays [1]. Atomic TS devices, which are operated by the formation and rupture of Ag (or Cu) filament, are attractive selector devices due to their extremely low Ioff compared to those of OTS and IMT devices. Such devices suffer from a slow turn-off speed and poor uniformity [7,8], and these issues occur with uncontrolled movements and amount of Ag, which forms conductive filament (CF). It is important to carefully control the amount of Ag and switching region This goal can be achieved by adopting Ag-based chalcogenide materials [9,10,11] and pulse scheme modulation [12].
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