Abstract
In this paper, we introduce a model to analyze the manufacturing of an implanted-junction rectifier. The model gives a possibility to analyze dependence of charge carriers mobility on the value of dose of implanted ions. Also, we introduce an analytical approach to analyze mass transfer. The approach gives a possibility to make the analysis in a more common situation, as was recently done in the literature. Analysis of the introduced model shows an increae in the spread of distribution of dopant and decrease of mismatch-induced stresses in multilayer structures with increase of dose of implanted ions.
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