Abstract
In this paper, we analyzed the dependence of charge carriers mobility on value of radiation dose during ion implantation. Based on the considered model, we determine conditions to decrease radiation damage in the irradiated materials. Also we introduce an analytical approach to analyze mass transfer in the irradiated materials. The approach gives a possibility to take into account nonlinearity of the considered process, as well as changes of parameters of the considered process in space and time at one time.
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