Abstract
The degradation mechanism of ZnMgSSe/ZnSSe/ZnCdSe separate confinement heterostructure laser diodes is studied under continuous wave and pulsed operation at room temperature. The degradation of the active quantum well is caused by formation of optically inactive areas which nucleate at paired stacking faults. These ‘‘dark defects’’ are identified as areas of dislocation network and point defect segregation.
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