Abstract
ZnSe-based II-VI laser diodes were grown by using molecular beam epitaxy (MBE) on GaAs(1 0 0) substrates. Continuous-wave, stimulated emission at room temperature was observed at a wavelength of 536.5 nm with a threshold current of 45 mA (642 A/cm 2 ) from a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate confinement heterostructure laser diode. A lifetime of 11 s was achieved when the defect density of laser diode structure was less than 10 5 cm -2 . Electroluminescence tests were conducted to find the origin of the defect generation at the laser diode structure. We monitored the generation of the dark line defects along during the electroluminescence.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
