Abstract
Predictive models of the damage evolution during post-implantation annealing are important for predicting the performance of final devices. An existing model of the thermal evolution of dislocation loops in silicon during post-implantation annealing has been recalibrated to better capture the distinction between faulted and perfect dislocation loops. The calibration was based on experimental findings from the literature on the simultaneous presence of both faulted and perfect dislocation loops after post-implantation annealing.Graphical abstract
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